Micromachined Subterahertz Waveguide-Integrated Phase Shifter Utilizing Supermode Propagation

Abstract

In this work, we propose a new concept of phase shifting by tuning the coupling distance between two parallel silicon slabs that support the propagation of an in-phase supermode. A prototype device was implemented in the 220-330-GHz band by integrating the micro-electro-mechanical system (MEMS)-actuated phase-shifting mechanism, based on two moveable parallel-coupled high-resistivity silicon slabs, inside a metallized hollow rectangular waveguide in silicon-on-insulator (SOI) micromachining technology. The prototype device has been characterized to a maximum continuous phase tunability of 550° with a maximum insertion loss of 1.87 dB achieved at 330 GHz. A maximum figure-of-merit (FOM) of 375°/dB is achieved at around 320 GHz, which presently is the highest FOM value reported for any phase shifter in the subterahertz (sub-THz) frequency range. The bandwidth covers the whole waveguide band with an average and worst case insertion loss of 1.94 and 2.5 dB, respectively, a worst case insertion-loss variation of 0.7 dB and a phase error better than 4° for all phase states. A large displacement of MEMS electrostatic comb-drive actuators that are co-fabricated in the micromachined waveguide platform is achieved by a driving voltage of 50 V. The prototype footprint is 7.3 ×5.3 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .