Micromachined 28-GHz power divider in CMOS technology

Abstract

A broad-band power divider is presented in CMOS technology. The devices are realized by postprocessing chips that are fabricated in a standard 1.2-/spl mu/m CMOS process. Developed postprocessing includes wire bonding for ground equalization, deposition of a stress-compensation layer, and selective etching of the silicon substrate. By employing coupled coplanar transmission lines, the area of dividers is minimized to 0.8 mm/spl times/2.1 mm. A 20-35 GHz power divider exhibits a coupling of -3.8 dB/spl plusmn/0.6 dB.