Abstract
We demonstrate a microkinetic modeling framework which is a first principle-based surface reaction thermodynamics modeling methodology to describe the plasma-enhanced atomic layer deposition process of silicon nitride thin film formation. The results illustrating the relationship between silicon nitride growth per cycle (GPC) and quasi self-limiting behavior on both dichlorosilane precursor dose amount and plasma nitridation time are consistent with the experiment. Ultimately, GPC is limited to the equivalent of a half monolayer of a Si3N4 crystalline structure. Importantly, we have observed a strong correlation between subsurface NH terminated Si group concentration and HF wet etch rate by an experiment, which varies with substrate temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.