Abstract
By analyzing the published data for the microhardness H of the A IIB IVC 2 V and A IB IIIC 2 VI chalcopyrite-structure semiconductors, a linear relation between this parameter and its corresponding Debye temperature is found. On the basis of this result and taking into account that H for these compounds depends on the intrinsic defect equilibrium of the crystals, the microhardness of nearly stoichiometric samples is estimated. It is also found that H decreases as the ionicity increases and tends to vanish at f i0 ∗ ≈ 0.79 . This is the critical ionicity that separates the four-fold chalcopyrite compounds with those of the six-fold structures.
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