Microfluidic shearing regulated in spin-coated dielectrics for ultra-low voltage and high-performance synaptic transistors

Abstract

Polarization-based synaptic transistors offer the advantages of low power consumption and non-volatility, but they face significant challenges in achieving multi-level conductance states and low operating voltage. Here, this issue was resolved by precisely controlling the alignment of polar electret molecule chains through microfluidic techniques in spin-coating. Optimized devices exhibit cycles of near-linear potentiation and depression, yielding 80 distinct conductance states under ultra-low voltage pulse stimulation (0.1 V/−0.1 V), with an ideal dynamic range of approximately 90 nA. Additionally, simulated image recognition accuracy exceeds 90%, highlighting exceptional weight updating capabilities. This work opens up an avenue for low-cost, low-power, and high-performance synaptic devices.