Abstract
Lead halide perovskites possess outstanding optical characteristics that can be employed in the fabrication of phototransistors. However, due to low current modulation at room temperature, sensitivity to the ambient environment, lack of patterning techniques and low carrier mobility of polycrystalline form, investigation in perovskite phototransistors has been limited to rigid substrates such as silicon and glass to improve the film quality. Here, we report on room temperature current modulation in a methylammonium lead iodide perovskite (MAPbI3) flexible transistor made by an extremely cheap and facile fabrication process. The proposed phototransistor has the top-gate configuration with a lateral drain–channel–source structure. The device performed in the linear and saturation regions both in the dark and under white light in different current ranges according to the illumination conditions. The transistor showed p-type transport characteristics and the field effect mobility of the device was calculated to be ~1.7 cm2 V−1 s−1. This study is expected to contribute to the development of MAPbI3 flexible phototransistors.
Highlights
Advanced applications of transistors for portable and wearable devices require the use of lightweight flexible substrates
We have developed a new fabrication method that has previously tested for making perovskite-based photoresistors with no hysteresis effect and high stability of the device at room temperature [30,31,32,33]
The laser engraved channel was filled with 2 μL of the perovskite precursor solution using the capillary force when a droplet of the solution was placed at one end of the channel
Summary
Advanced applications of transistors for portable and wearable devices require the use of lightweight flexible substrates. Different technologies and materials have been employed to develop flexible phototransistors by low-temperature fabrication methods [1]. Among the materials that are compatible with low-temperature processes, organic semiconductors suffer from low mobility [2] and metal oxide semiconductors require complicated and costly deposition techniques for producing high quality films [3]. An excellent candidate to be used as the photoactive layer in phototransistors is metal halide perovskite. Over the past ten years, metal halide perovskites, and MAPbI3 , have been recognized as the fastest growing technology in solar cell applications. The widespread research into MAPbI3 photovoltaics is due to its outstanding optical properties, including a high absorption coefficient [4] and low intrinsic recombination rate [5], along with low-cost solution-based fabrication methods [6]
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
