Abstract
Fast atom beam (FAB) etching is useful for microfabrication of insulators or composite materials with metals and semiconductors because of the electric neutral property. The FAB source for a large diameter of (8 inch) FAB has been developed and the characteristics have been studied by spectroscopic and other methods. The FAB source consists of an anode situated between two cathodes, a gas inlet, a magnet around the source and is operated under a cold cathode discharge. The source emits the FAB for argon, chlorine, fluorine, and any other gas (atoms or molecules) with about 500 eV of kinetic energy. By using this FAB source, etch rates of up to several hundred Å/min for Si wafers have been obtained by a bromine fast atom beam.
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