Abstract
This letter reports the design, fabrication, and performance of millimeter-wave transmission lines and devices in a tri-layer thick-copper (Cu) process. Beneath the Cu layers is a low-voltage lead zirconium titanate (PZT) MEMS stackup atop a nitride membrane, on high-resistivity silicon. The 10 μm thick Cu layers enable several transmission-line topologies, and the PZT-MEMS functionality enables tunability. We designed transmission lines and un-optimized noncontact distributed MEMS transmission line (DMTL) phase shifters for 75-110 GHz, and present static measurements here. Simulation and measurements are in close agreement, with measured CPW line loss 0.15 dB greater than simulated (0.27 dB/mm at 95 GHz). Excess loss is attributed to Cu roughness, conductivity, and membrane/strap supports. Measured noncontact DMTL phase shifters exhibit a mean of 40 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> /dB when intrinsic line loss is subtracted.
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