Abstract

Photolithographic patterning and deterministic transfer of reduced graphene oxide (rGO) are key innovations that can give way to cost-effective batch processing of nanoelectromechanical system (NEMS)-based resonators with high throughput. Here, by implementing the same, we report a facile fabrication process for NEMS-based resonators consisting of rGO as the active material for the structural layer. The structural properties of rGO thin film are confirmed using Raman spectroscopy and X-ray diffraction analysis. Temperature-dependent current–voltage characteristics of rGO film ensure the typical 2D Mott variable range hopping (VRH) transport with ambipolar charge conduction, further supporting the effectiveness of the fabrication process. All-electrical actuation and readout of the fabricated resonators are performed using both frequency modulation (FM) downconversion and piezoresistive mixing methods adeptly to achieve a resonance frequency of around 28–32 MHz. The fabrication process is compatible with the current microelectronic technology and can foster the prospect of on-chip implementation of rGO NEMS toward possible applications such as molecular sensors, mass detectors, etc.

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