Abstract
The technology of microelectronic resistive gas sensors is considered. Heater and thermistor contacts are formed on an oxidized silicon substrate by sputtering a nichrome film and subsequent photolithography in combination with reactive magnetron sputtering of a nanocrystalline tin dioxide film with terbium and antimony additives. A 1.5 × 1.5 mm sensor requires 90 mW for heating to optimal working temperature of 250–280°C. The sensor has very high sensitivity to alcohols and low sensitivity to benzene and acetone.
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