Abstract

A new focused ion beam (FIB) miore method is proposed to measure the in-plane deformation of object in a micrometer scale. The FIB moire is generated by the interference bewteen a prepared specimen grating and FIB raster scan lines. The principle of the FIB moire is described. Several specimen gratings with 0.14 and 0.20 micron spacing are used to generate FIB miore patterns. The FIB moire method is successfully used to measure the residual deformation in a MEMS structure after removing the SiO<sub>2</sub> sacrificial layer with a 5000 lines/mm grating. The results demonstrate the feasibility of this method.

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