Abstract
By complementary use of X-ray crystal truncation rod (CTR) scattering and difference X-ray reflectivity (DXR), structural properties on ultra-thin thermal oxides grown on Si(0 0 1) substrates were obtained. A thin film which contains SiO 2 crystallites concentrated at the SiO 2/Si(0 0 1) interface revealed to have an interfacial thin layer characterized by high electron density, and vice versa. An effect of annealing in Ar gas has been understood consistently. The CTR scattering data indicated that probability of finding the crystallites in the oxide film remained, but the lattice constant of the crystallites increased along the direction perpendicular to the interface by the annealing. The decrease in the density calculated by this volumetric expansion agrees well with the decrease in average density of the interfacial thin layer observed by the DXR measurements.
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