Abstract
Hydrogenated microcrystalline silicon (/spl mu/c-Si:H) p-i-n solar cells have been prepared using a conventional RF-plasma-enhanced chemical vapor deposition (PECVD) method at a low process temperature of 140/spl deg/C. Low temperature deposition is effective to suppress the formation of oxygen-related donors that cause a reduction in open circuit voltage (Voc) by shunt leakage. We demonstrate the improvement of Voc by lowering the deposition temperature down to 140/spl deg/C with maintaining high short circuit current density (Jsc) and fill factor (FF). An efficiency of 8.9% was obtained using an Aasahi-U substrate. Further optimization of texture of transparent conductive oxide (TCO) substrate has been developed by using ZnO, and the highest efficiency of 9.4% (Voc=0.526 V, Jsc=25.3 mA/cm/sup -1/, FF-0.710) in our study was obtained on ZnO substrate textured by etching process. Limiting factors of solar cell performance are discussed based on the growth mechanism of /spl mu/c-Si:H.
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