Abstract
Microcrystalline silicon deposited by plasma enhanced chemical vapor deposition is a new material for solar cell applications. To optimize the cell performance microcrystalline solar cells deposited at different silane concentration (2 - 7.2 %) in hydrogen were investigated. For these cells four characteristic features were found: the dark current of the cells decreases, the open circuit voltage increases and the blue response is reduced with increasing silane concentration. The fill factor of the pin diodes shows a maximum of larger than 70 % for cells prepared at a silane concentration between 3.5 - 5.5 %. To study the transport and recombination of the diodes we have investigated the temperature dependence of these diodes and compared the experimentally determined optoelectronic properties with simulated data. The simulations reveal that the equilibrium carrier concentration of free carriers decreases and the influence of the nucleation region of the i-layer on the blue response increases with larger silane concentration.
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