Abstract
This letter reports on microcrystalline silicon near infrared (NIR) photodiode detector. The fabricated device shows dynamic ratio of 200 at 850 nm wavelength per 0.2 mW/cm 2 of incident power density at reverse bias voltage of -1 V with response time of 400 μs. The dynamic ratio achieved here is 15 times higher than the state of art large area inorganic a-SiGe:H phototransistor and twice the one for state of art organic cyanine based NIR detector. The speed of this device is 40 times faster than the a-SiGe:H detector. The overall advantage of high dynamic ratio and fast response alongside with compatibility with standard a-Si:H thin film transistor industry makes this device suitable for large area NIR detection applications.
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