Abstract
Microcrystalline formation in hydrogenated silicon films deposited under high hydrogen partial pressures by reactive r.f. sputtering method has been studied by means of small angle scattering of X-ray. The existence of microcrystalline regions are detected in samples deposited under high hydrogen partial pressure above 40% at the total gas pressure of H 2 and Ar mixture of 2 × 10 -2 torr. The mean radius of microcrystalline regions increases with increasing hydrogen partial pressure. Relation between the presence of microcrystalline state and the electric properties of films is briefly discussed.
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