Abstract
The electronic and structural properties of p-type microcrystalline silicon films prepared near the microcrystalline to amorphous (μc-amorphous) transition by hot-wire chemical vapor deposition are studied. Silane is used as a source gas while H 2 as diluent and trimethylboron (TMB) and boron trifluoride (BF 3) as doping gases. Increasing TMB concentration from 0.01% to 5% favors the amorphous growth whereas for BF 3 the crystalline fraction remains constant. The dark conductivity ( σ d) of μc-Si:H p-layers remains approximately constant for TMB = 1–5% at constant crystalline fraction X c. This dark conductivity behavior is attributed to the decrease in doping efficiency with increasing TMB concentration. The best initial efficiency obtained for a 400 nm amorphous pin solar cell with optimized μc-Si:H p-layer is 7.7% ( V oc = 874 mV, J sc = 12.91 mA/cm 2, FF = 68%).
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