Microcrystalline and wide band gap p + window layers for a-Si p-i-n solar cells

Abstract

Amorphous silicon p-i-n solar cells have been made with amorphous silicon, a-Si:B:H, amorphous silicon carbide, a-SiC:B:H, and microcrystalline silicon, μc-Si:B:H p + layers. The open circuit voltage increases with the introduction of a-SiC or μc-Si p + layers due to an increase in the built-in field of the p-i-n junction. Bias dependent quantum efficiency and temperature dependent current voltage measurements indicate that the open circuit voltage is limited by a combination of interface and bulk recombination.