Microcontroller TRNGs Using Perturbed States of NOR Flash Memory Cells

Abstract

This paper introduces a new technique that perturbs split-gate NOR Flash memory cells and extracts randomness of read noise to generate true random numbers. Flash memory cells exhibit threshold voltage fluctuations during read operations caused by thermal noise and random telegraph noise effects. Recent proposals demonstrate how these inherent properties of Flash memory cells can be used to create true random numbers in modern NAND Flash memories. However, they cannot be directly applied to NOR Flash memories in microcontrollers that have different architecture, improved data retention, high endurance, and are not as susceptible to noise as high-density NAND Flash memories. The proposed technique is experimentally demonstrated and evaluated using a family of commercial microcontrollers. The evaluation shows that it enables extraction of high-throughput random sequences that pass the NIST statistical tests. Advantages of the proposed technique are as follows: (a) it does not require any special hardware and/or interface modifications, (b) it is robust, cost-effective, and high-throughput, (c) it is entirely implemented in software, and (d) it is flexible and can be tailored to work in low-end microcontrollers that are often resource- or cost-constrained.