Abstract
At constant current (I) the forward bias potential (V) of a pn junction diode may be considered to vary linearly with temperature (t) within a temperature range. Based on this property we have constructed diode thermometer using germanium (Ge) and silicon (Si) diodes. The experimental data at constant forward current have been fitted to a straight line for calibration of the diode thermometers using the least square method. Furthermore, the fitting parameters of the straight line have also been used to determine the band gap energy of germanium and silicon and experimental values of band gap for both the semiconductor materials are found to agree well with accepted values.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
