Abstract
A detailed quantitative study of the microstructural variation of chemical composition of chemically vapor‐deposited commercial SiC SCS‐6 fiber is presented. Chemical etching and various electron‐optical techniques including scanning electron microscopy, transmission electron microscopy, transmission electron microscopy, scanning Auget microscopy, Auger electron spectroscopy, and parallel electron energy loss spectroscopy are used to analyze the chemical composition of the as‐received fiber. In addition, some results on stereology of the high‐temperature annealed fiber are presented. The results show that the carbon‐to silicon atom ratio in the SiC layers decreases in a stepwise fashion from ∼ 3:2 to ∼ 1:1 in going from the inner‐most layer to outermost layer.
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