Abstract
Design and operation principles of a new microchannel avalanche photodiode with an avalanche multiplication coefficient of up to 105 and a linearity range expanded by an order of magnitude compared to the existing analogs are described. A distinctive feature of the new device design is that the forward-biased p_n junctions (playing the role of individual quenching resistors) are situated under each pixel. This circumstance ensures an increase in the density of multiplication channels up to 40000 mm-2 at a 100% sensitive device area.
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