Abstract
The design, the realization, and the characterization of silicon resonant cavity enhanced (RCE) photodetectors, working at 1.55 μm, are reported. The photodetectors are constituted by a Fabry-Perot microcavity incorporating a Schottky diode. The working principle is based on the internal photoemission effect. We investigated two types of structures: top and back-illuminated. Concerning the top-illuminated photodetectors, a theoretical and numerical analysis has been provided and the device quantum efficiency has been calculated. Moreover, a comparison among three different photodetectors, having as Schottky metal: gold, silver, or copper, was proposed. Concerning the back-illuminated devices, two kinds of Cu/p-Si RCE photodetectors, having various bottom-mirror reflectivities, were realized and characterized. Device performances in terms of responsivity, free spectral range, and finesse were theoretically and experimentally calculated in order to prove an enhancement in efficiency due to the cavity effect. The back-illuminated device fabrication process is completely compatible with the standard silicon technology.
Highlights
In the last two decades, there has been growing interest in photonic devices based on Si-compatible materials [1, 2] in the field of both optical telecommunications and optical interconnects
We prove that a significant enhancement in quantum efficiency can be achieved by using an resonant cavity enhanced (RCE) structure
The proposed devices are RCE structures incorporating silicon photodetectors based on the internal photoemission effect
Summary
In the last two decades, there has been growing interest in photonic devices based on Si-compatible materials [1, 2] in the field of both optical telecommunications and optical interconnects In this context, tremendous progresses in the technological processes have allowed to realize effectively fully CMOS compatible optical components, such as lowloss waveguides, high-Q resonators, high speed modulators, couplers, and optically pumped lasers [3,4,5,6,7,8]. Tremendous progresses in the technological processes have allowed to realize effectively fully CMOS compatible optical components, such as lowloss waveguides, high-Q resonators, high speed modulators, couplers, and optically pumped lasers [3,4,5,6,7,8] All these devices have been developed to operate in the wavelength range from the C optical band (1528–1561 nm) to the L optical band (1561–1620 nm) where the defect-free intrinsic bulk Si has minimal absorption. An improvement in responsivity at 1.55 μm has been theoretically and experimentally demonstrated for the Cu/p-Si Schottky diode provided by a high reflectivity Bragg mirror
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
