Abstract
AbstractWe summarize our earlier research showing how the radiative properties of an individual InAs quantum dot exciton state can be altered by their spatial and spectral position with respect to a discrete semiconductor microcavity mode. The InAs quantum dot is formed epitaxially in GaAs, and the microcavity is processed from a one‐wavelength distributed Bragg reflector planar microcavity of GaAs and AlAs to form a sub‐micrometer diameter pillar. Two states are tuned through a discrete cavity mode through sample temperature changes and show a spontaneous emission enhancement of 4. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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