Abstract
We present the fabrication and characterization of an array of microbridge-structured magnetoelectric (ME) thin film sensors which are constructed by an ME composite consisting of a 1 $\mu \text{m}$ PZT film and a 1 $\mu \text{m}$ amorphous FeCoSiB film deposited on a partially thinned Si substrate. Characterization of the sensor showed a large ME coefficient of $16.87~\text {V/cm}\cdot \text {Oe}$ in resonance at 7.9 kHz without a charge amplifier. The sensitivity was enhanced by 1.65 times when three identical sensors were connected in series. The resonant frequency of the sensor was precisely regulated by adjusting the etched area of the substrate, and the 3 dB bandwidth of the resonant frequency was doubled after two adjusted sensors were connected in parallel.
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