Microbolometer with a salicided polysilicon thermistor in CMOS technology.

Abstract

The metal-type microbolometers in CMOS technology normally suffer low resistivity and high thermal conductivity, limiting their performance and application areas. In this paper, we demonstrate a polysilicon microbolometer fabricated in 0.18 µm CMOS and post-CMOS processes. The detector is composed of a SiO2 absorber coupled with a salicided poly-Si thermistor that has a high resistivity of 1.37×10-4 Ω·cm and low thermal conductivity of 18 W/m·K. It is experimentally shown that the microbolometer with a 40 µm × 40 µm pixel size has a maximum responsibility and detectivity of 2.13×104 V/W and 2.33×109 cmHz1/2/W, respectively. The results are superior to the reported metal-type and diode-type microbolometers in the CMOS process and provide good potential for a low-cost, high-performance, uncooled microbolometer array for infrared imaging applications.