Abstract
A microbeam line for MeV heavy ions of almost any element has been developed for microion-beam processing such as maskless MeV ion implantation and its in-situ analysis. Beam spot sizes of 4.0 µm × 4.0 µm for 3 MeV C2+ and 9.6 µm × 4.8 µm for 1.8 MeV Au2+ beams were obtained. Maskless MeV gold ion implantation to a silicon substrate and in-situ microanalysis before and after ion implantation were demonstrated.
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