Abstract
SEM (Scanning Electron Microscopy) and micro-PEB (Proton Elastic Backscattering) were used to study a composite ceramic (Si 3N 4/SiC) layer generated on the surface of SiC by exposing SiC to an N 2 atmosphere at high temperatures (1850, 1950 and 2000°C) for different times of 0.5, 1, and 2 h, respectively. The thickness of the layers and the concentration of Si 3N 4 in the layers have been determined and correlated with the material properties, such as bending strength and fracture toughness, before and after the nitndation process. A remarkable improvement of the properties has been found to be related to the Si 3N 4 concentration in the nitndation layer. A model of N 2 diffusion in SiC under HIP (Hot Isostatic Pressing) is discussed.
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