Abstract
Microanalyses of the reverse-bias leakage current increase in the laser lift off (LLO) GaN-based light emitting diodes were performed. It was found that the amount of dislocations did not obviously change after LLO process in our experiments. The conductive-atomic force microscopy images and transmission electron microscope (TEM) images results revealed that almost all screw dislocations became to be related with leakage current and the current intensity increased over 100 times after the LLO process; however, only nanopipes corresponded to leakage current in the sample without the laser irradiation. Scanning TEM images indicated microstructure changes induced by LLO process. Amount of point defects around dislocations might be responsible for the increase in leakage current by providing more levels for tunneling.
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