Abstract
Methods for the reduction of micro-twin defects in InSb/AlInSb epilayers were investigated by using 〈1̄16〉-directional TEM analysis. The use of a 2°off-axis GaAs (001) substrate which has been known as an effective way to reduce micro-twin densities was combined with another approach, the use of an As2 beam for oxide desorption from a GaAs substrate surface. The combined method yields a micro-twin density of 3.3×102/cm, which is 3.0 times smaller than for a similar previous method with an Sb2 flux. This study also demonstrates the usefulness of 〈1̄16〉-directional TEM analysis for investigating micro-twin defects in (001) thin films.
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