Abstract
Structural characterizations of two ITO ceramics that were respectively sintered at 1560°C and 1600°C were focused on and the results indicate that the lower sintering temperature is good for ITO ceramics to have the triangle fine grains, larger elemental concentration gradients of indium and tin and more content of In4Sn3O12 phase which displays the stronger grain orientation growth along the crystallographic direction of [0-11]. ITO films with 100nm thickness deposited at 25°C–230°C were used to investigate the effect of micro-structure on the film properties. Grain orientation growth of In4Sn3O12 phase is conductive to form ITO films of columnar structure. Otherwise, uniform micro-structure and higher solubility of SnO2 in In2O3 main phase contribute to deposit ITO films of higher sheet resistance, less thickness uniformity and higher transmittance at 25°C, smaller etching angle and lower etching rate at 230°C.
Published Version
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