Abstract
Abstract In this work, ohmic contacts were formed by varying the Ti/Al thickness ratio in the metal stack of Ti/Al/Ni/Au on Al .28 Ga .72 N/GaN HEMT epistructure followed by annealing in the temperature range 740–860 °C by rapid thermal processor (RTP). The contacts were electrically characterized for contact resistance ( R c ) and the sheet resistance ( R s ) of AlGaN/GaN epistructure. The ohmic contacts formed by Ti/Al metal thickness ratio of 1/5 exhibited lowest R c values and better surface morphology compared to the contacts formed by other Ti/Al metal thickness ratios. The difference observed in the electrical characterization of these contacts was correlated with their X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) analyses. The surface morphology of the ohmic metal post annealing showed two distinct regions in scanning electron microscope (SEM) images. The energy dispersive X-ray analysis (EDAX) identified these regions as Ni–Al and Au–Al rich. Ni–Al rich region is believed to be responsible for rough morphology. Further, the contact formed with Ti/Al metal thickness ratio 1/5 showed less number of elemental Al and Ti atoms and therefore was correlated with lower oxidation probability of the contact compared to ohmic contact formed by other metal thickness ratios.
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