Abstract
TiO2-CdO composite thick film deposited on Si substrate was characterised for diode applications. X-ray Diffraction (XRD) confirms the existence of anatase phase of TiO2 and a cubic phase of CdO with a maximum diffraction at (101) plane. Porous surface morphology was recognized from scanning electron microscope (SEM).The UV–visible spectra have revealed a direct band gap of 3.17 eV while photoluminescence spectra and CIE diagram show blue-green emissions at 2.33 eV. Diode parameters such as ideality factor (n) and barrier height (Φb) have been calculated with the aid of I-V characteristics. Thus extracted results indicate the suitability of TiO2-CdO composite thick films for photovoltaic applications.
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