Abstract
We report applications of the micro-Raman technique to study the compositional dependence of phonon modes in graded AlxGa1—xP layers. The dependence of the phonon frequencies on the Al content was monitored in a single sample for two different crystallographic orientations. The measured compositional dependence of the LO and TO phonon frequencies are in good agreement with results of calculations based on the Modified Random Element Isodisplacement (MREI) model. The Raman spectra of the samples reveal also the existence of other features due to disorder.
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