Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen-Doped 4H-SiC Substrate

Abstract

The strain fields in a 4H-SiC homo-epitaxial layer deposited on a nitrogen-doped 4H-SiC substrate were studied using Raman scattering microscopy. The cross-sectional (1-100) and (11-20) surfaces of the epitaxial substrate were examined through the peak shifts of several Raman-active phonon modes for 4H-SiC, and tensile strain was found along the direction of 4° off the c-axis at the epilayer/substrate interface. The effect of the facet trace in the substrate, which has a higher nitrogen concentration than the other parts of the substrate, was also studied. The tensile strain at the epilayer/substrate interface was found to be hardly enhanced for the epilayer deposited on the facet trace.