Micro-Raman scattering and photoluminescence study of boron-doped diamond films

Abstract

Micro-Raman scattering and photoluminescence spectra are implemented to investigate the characteristics of heavily boron-doped polycrystalline and homoepitaxial diamond films. Large differences on peak position and peak shape are observed between different growth sectors, the shift of the one-phonon diamond Raman peak is the largest in homoepitaxial (111) growth sector. These differences are due to different boron doping ratios in different growth sectors, the (111) growth sector contains more boron than the (100) growth sector. Fano-type interference appears in all spectra, the interference intensity increases with the increase of boron incorporation density. Upon boron doping, some luminescence emission bands due to nitrogen and silicon are quenched, the reason for this phenomena is the dramatic reduction of vacancies upon the incorporation of boron acceptors.