Abstract
Phosphorous ion clusters (P4 +) (8 keV, 4x1015 cm-2) were implanted with carbon ion clusters (C7) targeting 1.30 at.% and 1.50 at. % flat C profile (~50 nm from the surface) for NMOS device performance enhancement by tensile strain generation. Flash anneal (fRTP) at 1200oC and impulse spike anneal (iRTP) at 1000oC and 1050oC were used as annealing conditions. Micro-Raman characterization of cluster C-implanted Si was done before and after various rapid thermal annealing (RTA) techniques and conditions under various excitation wavelengths for virtual depth profiling of Si stress. As-implanted Si wafers showed almost no Raman signal due to the crystalline lattice damage from high dose cluster ion beam implantation. After RTA of the implanted Si wafers under different techniques and conditions, significant broadening and shift of Raman peaks, towards the lower wavenumber side, was measured, indicating the presence of tensile strain and crystallinity alterations. High resolution X-ray diffraction (HRXRD), secondary ion mass spectroscopy (SIMS) depth profiling and sheet resistance measurement results were compared with multiwavelength micro-Raman characterization results.
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