Abstract
This research aimed to investigate the feasibility of using direct amorphization of silicon induced by femtosecond laser irradiation for maskless lithography. A thin layer of amorphous silicon of predetermined pattern was first generated by irradiation by a femtosecond laser of Mega Hertz pulse frequency. The following KOH etching revealed that the amorphous silicon layer acted as an etch stop. Line width less than 1/67 the focused spot size was demonstrated and hence the proposed maskless lithography process has the potential of producing submicron and nanoscale features by employing a laser beam of shorter wavelength and a high NA focusing lens. Scanning Electron Microscope (SEM), a Micro-Raman and Energy Dispersive X-ray (EDX) spectroscopy analyses were used to evaluate the quality of amorphous layer and the etching process.
Highlights
Photolithography is the most widely used technique to fabricate microelectronics, microelectromechanical and nanoelectromechanical systems (MEMS and NEMS), microstructures for microfluidic systems as devices for chemistry and biochemistry, Lab On a Chip system (LOC) and other applications [1,2]
This research aimed to investigate the feasibility of using direct amorphization of silicon induced by femtosecond laser irradiation for maskless lithography
A thin layer of amorphous silicon of predetermined pattern was first generated by irradiation by a femtosecond laser of Mega Hertz pulse frequency
Summary
Photolithography is the most widely used technique to fabricate microelectronics, microelectromechanical and nanoelectromechanical systems (MEMS and NEMS), microstructures for microfluidic systems as devices for chemistry and biochemistry, Lab On a Chip system (LOC) and other applications [1,2]. This technique requires a photomask for replication. Photolithography is only cost efficient for high volume mass production. The customized production in turn resulted in growing interest in maskless lithography that can significantly reduce the cost of prototyping and manufacturing
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