MgO(200) Highly Oriented Films on Si(100) Synthesized by Ambient-Controlled Pulsed KrF Excimer Laser Deposition Method

Abstract

MgO film growth on Si(100) using the ambient-controlled pulsed KrF excimer laser deposition method has been performed under a wide range of synthesis conditions: oxygen pressure (P O2 ) of 10-6–10-3 Torr, substrate temperature (T sub) of 100–300° C, and laser irradiation energy density on Mg metal target of 0.6–2.0 J/cm2. MgO(200) pole figures of MgO films are measured by the X-ray ( CuKα) diffraction method using Schulz's reflection attachment. Almost all MgO films have strong (200)-preferred orientation and rather weak (220)-preferred orientation. The crystallographic relation of the former case is MgO(200)//Si(100) and MgO[01*BAR*1*BAR*]//Si[01*BAR*1*BAR*]. MgO film with the highest degree of (200)-preferred orientation was fabricated under the optimized conditions of T sub=300° C, energy density= 1.5 J/cm2, and P O2 =1×10-4 Torr.