Abstract
Gas cluster ion beams (GCIB), containing huge aggregates with several thousands of atoms or molecules, were employed as assist ion beams for fluoride film formation. As gas cluster ions shows low-energy effects, chemical reaction enhancement and strong surface smoothing effects, GCIB-assisted deposition can be a desirable deposition technique for thin film multilayer structures for the ultra-violet region. In this work, SF6-GCIB was employed as the assist ion beam for deposition of fluoride films (MgF 2 and LaF 3). For fluoride films, it had been difficult to use energetic ions during deposition because of damage induced by ion bombardments. With SF 6-GCIB irradiation, the surface roughness of LaF 3 and MgF 2 films decreased with increasing ion current density. From cross-sectional images, the film structure changed from columnar to bulk-like structure with high-dose SF 6-GCIB irradiation.
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