Abstract
Josephson effects on ramp-type MgB2/Al/AlOx/Nb junctions are demonstrated. The MgB2 thin films were prepared by sequential e-beam evaporation of boron and magnesium on buffered silicon substrate and synthesised by short post-annealing at 700°C. The prepared smooth nanocrystalline films, with maximal zero resistance critical temperature Tco ≈ 36 K, were in situ covered by an SrTiO3 overlayer. Ramp-edge was patterned by ion beam etching through photoresist mask. DC magnetron sputtering of Al (subsequently oxidized) and Nb was applied to complete the junction structure. Current-voltage characteristics and current steps at irradiation of samples by microwaves confirm the presence of weak link effects in the structures.
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