Abstract
The experiment for preparing MgB2 thin films by electron beam (e-beam) annealing of Mg–B multilayer is reported. The annealing process lasts less than 1s, which effectively suppresses the volatility of Mg as well as the reaction of Mg and oxygen. The influence of annealing parameters on the film quality including exposure time, accelerating voltage and beam current is investigated. It is found that e-beam with lower accelerating voltage can acquire MgB2 film with smaller annealing energy density. Also, double e-beam scan annealing process helps to obtain more uniform MgB2 thin films than the single scan. This rapid annealing method synthesizes MgB2 thin films with critical temperature Tc of 35K and critical current density Jc at 15K of 7.6×106Acm−2.
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