Mg diffusion in Si on a thermodynamic basis

Abstract

In the present work, magnesium diffusion in silicon studied recently in the temperature range 600–1200 °C (Astrov et al. in Phys Status Solidi A 214:1700192, 2017; Shuman et al. in Semiconductors 51:5, 2017) is investigated on the basis of the cBΩ thermodynamic model, which connects point defect parameters with the macroscopic elastic and expansion properties. The calculated activation Gibbs free energy, activation enthalpy, activation entropy, activation volume and activation specific heat of Mg diffusion exhibit non-linear temperature dependence, due to the anharmonic behavior of the isothermal bulk modulus of Si. The calculated activation enthalpy of diffusion (1.67–2.12 eV) is in agreement with the reported experimental value (1.83 ± 0.02 eV) of Mg diffusion in Si, whereas the calculated activation volume (60% of the mean atomic volume) is compatible with the reported interstitial diffusion of Mg impurities.