Abstract
Admittance spectroscopy was measured on Cu(In,Ga)(S,Se)2 thin film and single crystal heterojunctions. The emission rates of defects for various near-stoichiometric compositions follow a Meyer–Neldel rule, showing increasing attempt-to-escape frequencies with increasing defect depth. Defects in highly (In,Ga)-rich material showed lower attempt-to-escape frequencies and follow a separate Meyer–Neldel relation. Repetitive air annealing of a CuInSe2 heterojunction revealed a shift of the depth and capture cross section of an observed defect.
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