Abstract
Several versions of Mevva ion sources have been developed in our institute since 1988. It operates in a pulsed mode with a pulse length of 1.2 ms and a repetition rate of up to 50 pps. A time-averaged beam current of 10 or 50 mA has been extracted at 30–80 kV from Mevva IIA-H and Mevva IIB, respectively. In order to develop surface modification of materials by ion implantation we have constructed three kinds of Mevva ion source implantation systems. High dose (3–5×1017 cm−2) implantation with Ti, Ce, Y, and Ti+C, etc. has been carried out for improving the lifetime of metal cutting tools, relay contacts, dies, and some sophisticated components.
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