Abstract
A simple method for the analysis of concentration ratios N/Si and O/Si in silicon nitride and <m1;&2p>oxide layers on silicon substrate is presented. 1.95-MeV proton elastic backscattering was used to determine the composition and density. A comparison with 2.1-MeV helium <m1;&1p>Rutherford backscattering measurements is given. Results are in good agreement with each other. The <m1;&1p>method is especially useful to analyze samples of 20 000 Å or thicker layers. We conclude that these two techniques are complementary for the measurements of samples with different thickness. A brief discussion has been given on results.
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