Abstract
Areal densities [ at./ cm 2], average stoichiometric ratios, impurity concentrations and elemental depth profiles for high- E c thin films may be determined by high-energy backscattering using 3–5 MeV 4He analysis beams. Accuracies of about ± 3% and ± 1% are obtained for areal densities and average stoichiometric ratios, respectively. We present results of the analysis for several YBaCuO films in the thickness range 2500–9000 Å. We indicate the advantages of using the 3–5 MeV 4He analysis beams rather than the usual 1–2 MeV 4He beams used for Rutherford backscattering spectrometry.
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