MeV energy Fe and Co implants to obtain buried high resistance layers and to compensate donor implant tails in InP

Abstract

High-energy Fe and Co implantations were performed into InP:Sn at room temperature and 200 °C in the energy range 0.34–5.0 MeV. Range statistics were calculated for these ions in the above energy range. For the room-temperature implants, implant redistribution peaks around 0.8Rp and Rp+ΔRp, and both in- and out-diffusion of the implant are observed in the secondary-ion-mass-spectroscopy profiles of the annealed samples. The implant redistribution present in the room-temperature implants is much different than in elevated-temperature implants. For buried (high-energy) implants, much of the implant diffusion is eliminated if the implants are performed at 200 °C. For 200 °C implants, the yield of the Rutherford backscattering spectra on the annealed samples is close to that of a virgin sample. The MeV energy Fe and Co implantations at 200 °C are useful to obtain thermally stable, buried, and high-resistance layers of good crystalline quality in n-type InP and for the compensation of the tail of the buried n-type implant. However, due to the low solubility of Fe and Co in InP, the implants of these species are useful only to compensate n-type carriers with concentrations below 1017 cm−3.