MeV As and Au ion implantation in Si, GaP, GaAs, InSb and LiNbO 3: Study of range and lattice location

Abstract

MeV As + ions into Si and Au 2+ ions into Si, GaP, GaAs, InSb and LiNbO 3 crystal substrates have been implanted at room temperature and tilted geometry. Using Rutherford backscattering spectrometry and channeling techniques, measurements of the range profile and lattice location of As atoms (dose: 1.0×10 15/cm 2) were made. It appears that 95% As atoms are substitutional. For Au implantation, range parameters have been determined for ion energies 1.37-2.03 MeV for the Si substrate. Measurements were also made on other substrates implanted with 1.43 MeV Au ions. The measured range values have been compared with TRIM and the so called universal range-energy theories. Our experimental results show that the theoretically predicted values are underestimated in all the cases. We also present a new approach for the determination of the projected range and straggling—both longitudinal and transverse—from a single measurement.