Abstract
Deep trench structures have been widely introduced to the IC and MEMS devices, such as bottle trench structures with an aspect-ratio of more than 50:1 has been adopted to form the capacitors on DRAM. The fabrication of this kind of structures challenges the traditional surface profile and shallow trench measurement technology. A polarized Fourier-transform infrared (FTIR) reflectance spectrometry has been developed for accurate measurement of deep trench structures with unsymmetrical cross section. As different from traditional FTIR reflectance spectrometry, this method introduces a polarized modeling method for deep trench structures with unsymmetrical cross section. The validity and accuracy of this method are investigated by the simulations of metrology of 1-D deep trench structures with different polarized radiations.
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